Linear field effect transistor

ABSTRACT

In one form of the invention, a field effect transistor is disclosed, the transistor comprising: a channel between a source and a drain, the channel comprising: a first region 22 of a first semiconductor material having a first doping concentration; a second region 20 of a second semiconductor material having a second doping concentration, the second region 20 lying above the first region 22; a third region 18 of the first semiconductor material having a third doping concentration, the third region lying above the second region 20, wherein the first doping concentration is higher than the second and third doping concentrations; and a gate electrode 12 lying above the third region 18, whereby an electrical current flows in the channel primarily in the first region 22 or primarily in the second region 20 by varying a voltage on the gate electrode 12.

FIELD OF INVENTION

This invention generally relates to field effect transistors (FETs), andmore particularly to FETs with high dynamic range.

BACKGROUND OF INVENTION

Practical amplifiers fall short of ideal amplification due to at leasttwo limiting factors: noise and nonlinearities. Noise added to anamplified signal degrades the "quality" of low-level signals whiledevice nonlinearities distort large-amplitude signals. The useful rangeover which an active device may amplify power is called the dynamicrange. The lowest level signal that can be amplified is governed byinternal device noise. The highest level signal that can be amplified isdetermined by device nonlinearities which cause distortion. In additionto minimizing the noise and maximizing the linearity of the device, itis also desirable to minimize the dc power required to accomplish this.This requirement is often expressed in a figure of merit equal to theratio of the maximum microwave output power (at a specified level ofdistortion) to the applied DC power. The conventional method ofspecifying the level of distortion for this figure of merit is calledthe output intercept point of third order products, or simply OIP3. TheOIP3 method applies two input signals separated only slightly infrequency, and of substantially equal, but adjustable, power. A plot ismade of both the fundamental frequency output power and the power in thethird order intermodulation product versus the input power and a linearextrapolation is made of these two plots. The point where these twoextrapolations intersect is the OIP3 amplitude, which is read in dBmfrom the output power (ordinate) axis.

Attempts to improve amplifier dynamic range fall into at least twocategories: circuit techniques and intrinsic improvements in the activedevice itself. Circuit techniques, such as feed forward orpredistortion, are effective but can result in complicated and powerconsuming circuits. Intrinsic device improvements in the area ofmicrowave FETs have been centered on schemes to make a device withlinear transfer characteristics, i.e. an FETwith constanttransconductance, g_(m) =ΔI_(DS) /ΔV_(GS) (transconductance equals thechange in drain current divided by the change in gate voltage).

Williams and Shaw (see "Graded Channel FET's: Improved Linearity andNoise Figure", IEEE Transactions on Electron Devices, vol. ED-25, no. 6,pp 600-605, June 1978) in their theoretical study of the subjectemphasized using a special doping profile to maintain a constanttransconductance at all gate voltages. The structure used by Chu, et al(see "A Highly linear MESFET", IEEE-MTT-International MicrowaveSymposium Digest, pp 735-728, 1991), while achieving constant g_(m), isvery complex and the gate region is difficult to fabricate reproduciblyusing conventional etching techniques. Applicants have previouslydisclosed a simpler structure than that of the aforementioned prior anfor obtaining similar results (See Ikalainen and Witkowski,"High-Dynamic Range Microwave FET", Electronics Letters, vol. 27. no.11, pp 945-6, May 23, 1991).

SUMMARY OF THE INVENTION

The prior art has concentrated on maintaining a linear transconductanceversus gate voltage characteristic in attempts to fabricate transistorswith highly linear operating characteristics, and hence high dynamicrange. A substrate material structure is disclosed herein which uses aplurality of dopant layers, one of which (typically lightly doped indiumgallium arsenide, InGaAs,) has higher electron mobility and saturatedvelocity than highly doped GaAs. This permits a precise control of thetransconductance characteristic of an Flit fabricated on this substratesuch that the transconductance is slightly non-linear with respect togate voltage. The controlled transconductance nonlinearity of thisinvention compensates for the inherently nonlinear output conductance ofGaAs field effect transistors. While prior an structures haveoccasionally displayed a small degree of this desired nonlinearity, itsphysical origin does not appear to be predictable or well understood inthose structures. In contrast, the structure described herein produces adesired transconductance nonlinearity that may be enhanced or diminishedthrough choices in epitaxial layer design.

In one form of the invention, a field effect transistor is disclosed,the transistor comprising: a channel between a source and a drain, thechannel comprising: a first region of a first semiconductor materialhaving a first doping concentration; a second region of a secondsemiconductor material having a second doping concentration, the secondregion lying above the first region; a third region of the firstsemiconductor material having a third doping concentration, the thirdregion lying above the second region, wherein the first dopingconcentration is higher than the second and third doping concentrations;and a gate electrode lying above the third region, whereby an electricalcurrent flows in the channel primarily in the first region or primarilyin the second region by varying a voltage on the gate electrode.

In another form of the invention, a field effect transistor isdisclosed, the transistor comprising: a substrate; a first channel layerlying above the substrate, the first channel layer being composed of afirst semiconductor material; a second channel layer lying above thefirst channel layer, the second channel layer being composed of a secondsemiconductor material; a third channel layer lying above the secondchannel layer, the third channel layer being composed of the firstsemiconductor material; and a gate electrode above the third channellayer; wherein the second semiconductor material has a narrower bandgapthan the first semiconductor material, and further wherein the firstchannel layer has a higher doping concentration than the second andthird channel layers.

In still another form of the invention, a method for forming a fieldeffect transistor is disclosed, the method comprising the steps of:forming a channel between a source and a drain, the forming of thechannel comprising the steps of: forming a first region of a firstsemiconductor material having a first doping concentration; forming asecond region of a second semiconductor material having a second dopingconcentration above the first region; forming a third region of thefirst semiconductor material having a third doping concentration abovethe second region, wherein the first doping concentration is higher thanthe second and third doping concentrations; and forming a gate electrodeabove the third region, whereby an electrical current flows in thechannel primarily in the first region or primarily in the second regionby varying a voltage on the gate electrode.

An advantage of the invention is that it produces a desired nonlinearityin a transistor in a controllable and reproducible way. In contrast toprior art structures, the nonlinearity of the transconductancecharacteristic of the invention described herein may be altered in apredictable manner by changing such parameters as layer thickness,doping, or material composition. Additionally, the embodiment describedherein has exhibited current conduction in a two-dimensional electrongas at a heterointerface. This is accomplished in a structure that ismore easily fabricated than the traditional inverted High ElectronMobility Transistor that is known in the art because it does not rely onGaAs-over-AlGaAs epitaxy.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a preferred embodiment device;

FIG. 2a is a graph of the transconductance of a prior art transistor;

FIG. 2b is a graph of the transconductance of a first preferredembodiment transistor;

FIG. 3a is a band diagram simulation of a portion of a first preferredembodiment transistor at a gate bias voltage of -0.5 V;

FIG. 3b is a band diagram simulation of a portion of a first preferredembodiment transistor at a gate bias voltage of 0 V;

FIG. 4a is a simulation graph showing the doping and carrierconcentration of a portion of a first preferred embodiment transistor ata gate bias voltage of -0.5 V;

FIG. 4b is a simulation graph showing the doping and carrierconcentration of a portion of a first preferred embodiment transistor ata gate bias voltage of 0 V;

FIG. 5a is a graph of the second derivative of the transconductance vs.gate voltage characteristic of a prior art transistor;

FIG. 5b is a graph of the second derivative of the transconductance vs.gate voltage characteristic of a first preferred embodiment transistor;and

FIG. 6 is a graph showing the OIP3 of prior art and preferred embodimentdevices.

Corresponding numerals and symbols in the different figures refer tocorresponding parts unless otherwise indicated.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Applicant's studies show that, considering nonlinearities up tothird-order, it is desirable to have a device with only approximatelyconstant transconductance, but that ideally the transconductance vs.gate voltage characteristic should have a slightly positive curvature,i.e., the second derivative of g_(m) with respect to gate voltage shouldbe positive. This allows cancellation of distortion to occur betweennonlinear output conductance and nonlinear g_(m). Cancellation has beenshown to be an effective solution to the problematic nonlinearity of atransistor's output conductance (see Ikalainen et al, "Low-Noise, Low DCPower Linear FET", European Microwave Conf Proc, August 1992, pp570-575). However, while GaAs low-high doping profiles can exhibit atransconductance characteristic with small positive curvatures, there isnot an easy or predictable way to control the degree of curvature. FIGS.2(a) and 2(b) are drawn from Applicant's results comparing aside-by-side fabrication of a prior art design with a preferredembodiment. FIG. 2(a) shows that the transconductance of the prior artdesign flattens more than desired at the higher gate voltages (-0.5 V to0.5 V), while a first preferred embodiment transistor has a second peakin the same voltage range.

A preferred embodiment that addresses this shortcoming of the prior art,and produced the transconductance trace of FIG. 2b, will be describedwith reference to FIG. 1 and the Table, which show a material structurethat allows a precise control over transconductance shape versus gatevoltage to produce highly linear microwave FET amplifiers.

                  TABLE                                                           ______________________________________                                                                           Approx.                                    Ele-               Approx. Doping  Thickness                                  ment Material      (carriers/cm.sup.3)                                                                           (Å)                                    ______________________________________                                        10   Contact metal NA              4000                                       12   Gate metal    NA              5000                                       14   Source/drain  1 × 10.sup.18                                                                           300-1000,                                       n.sup.+  GaAs                 preferably                                                                    500                                        16   n.sup.-  GaAs 1 × 10.sup.16 to 1 × 10.sup.17,                                                   500-2500,                                                     preferably 5 × 10.sup.16                                                                preferably                                                                    2000                                       18   Etched n.sup.-  GaAs                                                                        1 × 10.sup.16 to 1 × 10.sup.17,                                                   100-500,                                                      preferably 5 × 10.sup.16                                                                preferably                                                                    250                                        20   n.sup.-  In.sub.x Ga.sub.1-x As,                                                            1 × 10.sup.16 to 1 × 10.sup.17,                                                   25-150,                                         where         preferably 5 × 10.sup.16                                                                preferably                                      0.10 < x < 0.20,              100                                             preferably x = 0.17                                                      22   n.sup.+  GaAs 1 × 10.sup.18                                                                           100-500,                                                                      preferably                                                                    300                                        24   Semi-insulating                                                                             Undoped         625 um                                          substrate                                                                ______________________________________                                    

The semi-insulating substrate 24 is preferably GaAs, but other materialssuch as InP and Si may also be used. The dopant is typically Si, but mayalternatively be an element such as Sn or Pb, for example. The Schottkygate 12 is typically 0.5 um or less in length, and is typically acomposite layer of Ti/Pt/Au. The contact metal 10, typically a compositelayer of AuGe/Ni/Au, forms an ohmic contact to the source and drain 14,and is typically alloyed so that contact metal 10 spikes through (shownin FIG. 1 by dashed line 11) and thereby contacts channel layers 18, 20and 22. An important aspect of the preferred embodiment is the low(18)-low (20)-high (22) nature of the channel doping profile. Thethickness and doping concentration of these doping layers effects thedesired nonlinear shape of the FET transconductance versus gate voltageas described hereinbelow.

In operation, the embodiment transistor has a voltage applied betweenthe drain and source contacts 10 and a voltage applied to the gateelectrode 12. A channel comprising first channel layer 22, secondchannel layer 20, and third channel layer 18 may be made conductive ornon-conductive by selecting the level of voltage applied to gateelectrode 12. It is convenient to describe the operation of thetransistor as it changes from a condition of pinch-off (i.e. a largenegative gate voltage and non-conductive channel) to a fully openchannel (i.e. a gate voltage close to 0 V and a fully conductivechannel). As the gate voltage moves from large negative voltages toward0 V, the transistor operation goes from pinchoff (very lowtransconductance) toward a fully open channel. The initial source-draincurrent is carried by the highly doped first channel layer 22 and thetransconductance reaches a fairly constant value (at around V_(G) =-0.5V) as can be seen in both FIG. 2(a) and FIG. 2(b). However, at highergate voltages, approaching and then exceeding 0 Volts, a portion of thesource-drain current moves into the lightly doped second channel n⁻InGaAs layer 20 in the embodiment transistor. Since the InGaAs secondchannel layer 20 has higher electron mobility and saturated velocitythan does the underlying GaAs first channel layer 22, an increase, orsecond peak (see FIG. 2b for V_(G) >0 V), in transconductance can beinduced to occur. This can be compared to the characteristic, shown inFIG. 2a of a prior art GaAs FET fabricated on a standard low-high dopingprofile substrate without the InGaAs layer.

A more graphical description of the operation of the embodimenttransistor may be had by referring to FIGS. 3a, 3b, 4a and 4b. FIGS. 3aand 3b are simulations of the band diagram of the three channel layers18, 20, and 22 (demarcated by dashed vertical lines) under a gate biasof -0.5 V (FIG. 3a) and 0 V (FIG. 3b). In FIG. 3a, the regions of theband diagram denoted 18, 20 and 22 represent the GaAs third channellayer, the InGaAs second channel layer, and the highly doped GaAs firstchannel layer, respectively. Comparison of FIGS. 3a and 3b reveal thebending of the conduction 26 and valence 28 bands and the shifting ofthe Fermi level 30 under the change in gate bias from -0.5 V to 0 V.

FIGS. 4a and 4b are companion simulation diagrams to FIGS. 3a and 3b andshow the doping density, or doping concentration, 32 and the carrierconcentration 34 in layers 18, 20 and 22 under -0.5 V (FIG. 4a) and 0 V(FIG. 4b) gate bias. Inspection of FIG. 4a reveals that a large majorityof carders (and thus current) reside in the highly doped GaAs layer 22,as dictated by the Fermi level 30 in FIG. 3a. However, at 0 V gate biasin FIG. 4b, a large spike 36 appears in the InGaAs layer 20. Inspectionof FIG. 3b shows that the Fermi level 30 is at or above the conductionband dip at the heterojunction between layers 20 and 22. Thus, electronsaccumulate in the dip and form an electron gas, as is seen inAlGaAs/GaAs High Electron Mobility Transistors (HEMTs). So, in additionto the bulk InGaAs layer having higher electron mobility and saturatedvelocity than does GaAs, the interface between the materials hasparticularly enhanced carrier transport properties as well. The secondpeak in transconductance in FIG. 2b results from the applied gatevoltage on the transistor reaching a level where conduction begins totake place not only in layer 22, but also in layer 20 and at theinterface between layers 20 and 22.

Control over the scale or size of the second transconductance peak ispossible by varying the second channel layer 20 thickness, dopingconcentration, or In-Ga mole fraction. In general, if the second channellayer 20 is made to be thicker, the second peak in transconductance willbe enhanced. Similarly, if the doping or In mole fraction is increased,the peak is expected to be enhanced. However, there are practical upperlimits to these parameters. The In mole fraction and thickness of theInGaAs layer are limited to approximately 0.20 to 0.22 and 200 to 250 Å,respectively. Thicker layers are more susceptible to defects induced bythe lattice mismatch at the GaAs/InGaAs boundary. Similarly, as the molefraction of In in InGaAs in increased (from 17%), its lattice constantdiffers more from that of GaAs, and an unacceptably strained InGaAslayer results. In general, the doping of the InGaAs layer is kept low topreserve the overall low-low-high doping profile and hence theadvantageous current transport that results in the secondtransconductance peak described hereinabove.

FIGS. 5a and 5b are plots of the second derivative of thetransconductance vs. gate voltage characteristic of the prior artlow-high device (FIG. 5a) and the first preferred embodimentlow-low-high device (FIG. 5b). While the darkened line section a-b ofthe trace in FIG. 5a indicates that the second derivative isapproximately zero, the darkened line section c-d of the trace of FIG.5b is decidedly positive over a range of gate voltages from slightlybelow 0 V to almost 0.5 V. Applicants have found that a device with thischaracteristic is very effective in cancelling the nonlinearity of theoutput conductance of the device. This leads to a device capable of morelinear operation and hence a greater dynamic range than with the devicesdescribed in the prior art.

In a reduction to practice, microwave tests were performed at 10 GHz onboth the prior art and the first preferred embodiment structure. OIP3results, shown in FIG. 6, were 37 dBm for the prior an and 42 dBm forthe embodiment device. Although the new design was not specificallyoptimized for low noise, the minimum noise figure of the two designswere the same at approximately 1.7 dB. Thus the dynamic range wasincreased a significant 5 dB with the embodiment transistor.

As briefly discussed hereinabove in reference to FIGS 3a, 3b, 4a and 4b,an advantage of the low-low-high doping profile structure is that it hasthe features of an inverted high-electron-mobility transistor (HEMT). AHEMT is generally a transistor comprised of two different semiconductorsof differing bandgaps. In a standard HEMT, a wide-bandgap highly-dopedlayer is formed on top of a lightly-doped layer having a narrowerbandgap. The band discontinuity between the layers promotes theformation of a potential well at the interface. A two-dimensionalelectron gas can be formed in the well that provides superior carriertransport qualifies than does the surrounding bulk semiconductor. Aninverted HEMT is characterized by a lightly-doped, low-bandgap, materialon top of highly-doped wider-bandgap material. The usual inverted HEMTuses aluminum gallium arsenide (AlGaAs) as the bottom layer, with anovergrowth layer of GaAs. Though commonly done, the growth of GaAs onAlGaAs can result in a GaAs layer having a high defect density, which inturn results in a transistor with inferior performance characteristics.In contrast, the growth of InGaAs on a GaAs generally results in lowerdefect densities. Using GaAs for the highly-doped wide-bandgap layer andInGaAs for the lightly-doped narrow-bandgap layer, as in the preferredembodiment discussed hereinabove, makes the structure very reproducibleand gives the desired transfer characteristics for linear amplification.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. This invention can be applied to other material systemswith varying mobilities such as Si/Ge, InP/InGaAs and so on. Further, itmay be appreciated that the preferred embodiment transistor describedhereinabove may be used in applications where MESFETs or HEMTs havetraditionally been used, for example, low-noise microwave receiveramplifiers, power amplifiers, switches, phase shifters, and the like.

Various modifications and combinations of the illustrative embodiments,as well as other embodiments of the invention, will be apparent topersons skilled in the art upon reference to the description. It istherefore intended that the appended claims encompass any suchmodifications or embodiments.

What is claimed is:
 1. A field effect transistor comprising:a channelbetween a source and a drain, said channel comprising:a first region ofa first semiconductor material having a first doping concentration; asecond region of a second semiconductor material having a second dopingconcentration, said second region lying above said first region; a thirdregion of said first semiconductor material having a third dopingconcentration, said third region lying above said second region, whereinsaid first doping concentration is higher than said second and thirddoping concentrations; and a gate electrode lying above said thirdregion, whereby an electrical current flows in said channel primarily insaid first region or primarily in said second region by varying avoltage on said gate electrode.
 2. The transistor of claim 1 whereinsaid second semiconductor material has a narrower bandgap than saidfirst semiconductor material.
 3. The transistor of claim 2 wherein saidsecond semiconductor material has a higher electron mobility andsaturated velocity than said first semiconductor material.
 4. Thetransistor of claim 1 wherein said second semiconductor material isInGaAs and said first semiconductor material is GaAs.
 5. The transistorof claim 1 wherein said substrate is composed of GaAs, said firstsemiconductor material is doped to a concentration of approximately1×10¹⁸ cm⁻³, said second channel layer is doped to a concentration inthe range of approximately 1×0¹⁶ to 1×10¹⁷ cm⁻³, and said third channellayer is doped to a concentration in the range of approximately 1×10¹⁶to 1×10¹⁷ cm⁻³.
 6. A field effect transistor comprising:a substrate; afirst channel layer lying above said substrate, said first channel layerbeing composed of a first semiconductor material; a second channel layerlying above said first channel layer, said second channel layer beingcomposed of a second semiconductor material; a third channel layer lyingabove said second channel layer, said third channel layer being composedof said first semiconductor material; and a gate electrode above saidthird channel layer; wherein said second semiconductor material has anarrower bandgap than said first semiconductor material, and furtherwherein said first channel layer has a higher doping concentration thansaid second and third channel layers.
 7. The transistor of claim 6wherein said first channel layer and said second channel layer contactone another along an interface, and wherein a portion of a current istransferred across said layers by a two-dimensional electron gas at saidinterface.
 8. The transistor of claim 6 further comprising drain andsource contacts to said first, second and third channel layers, whereinsaid transistor is operable with a drain current from said drain contactto said source contact, the level of said drain current being dependentupon a voltage between said gate electrode and said source contact, andfurther wherein a second derivative of a change in drain current dividedby a change in gate voltage is positive at a gate voltage ofapproximately 0 Volts.
 9. The transistor of claim 8 wherein said secondchannel layer is approximately 100 Å in thickness and said secondderivative has a positive first value.
 10. The transistor of claim 9wherein said second channel layer is made to be greater thanapproximately 100 Å in thickness, and wherein said transistor ischaracterized by a second derivative having a positive second value,wherein said positive second value is greater than said positive firstvalue.
 11. The transistor of claim 8 wherein said second channel layerhas a doping concentration of approximately 5×10¹⁶ cm⁻³, and whereinsaid second derivative has a positive first value.
 12. The transistor ofclaim 11 wherein said second channel layer is made to have a dopingconcentration greater than approximately 5×10¹⁶ cm⁻³, and wherein saidtransistor is characterized by a second derivative having a positivesecond value, wherein said positive second value is greater than saidpositive first value.
 13. The transistor of claim 6 wherein said secondsemiconductor material is InGaAs and said first semiconductor materialis GaAs.
 14. The transistor of claim 8 wherein said second channel layeris composed of In_(x) Ga_(1-x) As, wherein x is approximately 0.17, andwherein said second derivative has a positive first value.
 15. Thetransistor of claim 14 wherein said second channel layer is composed ofIn_(x) Ga_(1-x) As, wherein x is greater than approximately 0.17, andwherein said transistor is characterized by a second derivative having apositive second value, wherein said positive second value is greaterthan said positive first value.